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Semiconductor component i.e. metal oxide semiconductor transistor, has dielectric layer arranged between drift zone and drift control zone, where drift zone includes varying doping and/or varying material composition based on dielectric
Semiconductor component i.e. metal oxide semiconductor transistor, has dielectric layer arranged between drift zone and drift control zone, where drift zone includes varying doping and/or varying material composition based on dielectric
The component has a drift zone (20) arranged between two component zones. A drift control zone (30) is arranged in a direction adjacent to the drift zone. A dielectric layer (50) is arranged between the drift zone and the drift control zone. The drift zone has a varying doping and/or a varying material composition based on a dielectric. The drift zone has two sections (21, 22), where doping concentration of the section (22) is selected such that the section (22) has a higher voltage loading capacity than the section (21). An independent claim is also included for a method for manufacturing a semiconductor component.
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