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Semiconductor component e.g. power transistor, has drift zone, and drift control zone made of semiconductor material and arranged adjacent to drift zone in body, where accumulation dielectric is arranged between zones
Semiconductor component e.g. power transistor, has drift zone, and drift control zone made of semiconductor material and arranged adjacent to drift zone in body, where accumulation dielectric is arranged between zones
Component has a semiconductor body and a drift zone (2) having a conductivity type in the body. A drift control zone (3) is made of a semiconductor material and is arranged adjacent to the drift zone in the body. An accumulation dielectric is arranged between the zones. The control zone has a semiconductor section that is doped in such a manner that the section is smoothed in a direction perpendicular to the dielectric. An independent claim is also included for: a power transistor comprising a drift zone and a drift control zone.
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