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Method for crystallization of amorphous semiconductor layer applied on substrate, involves positioning and exposing of substrate on specified position before or after exposure with excimer laser
Method for crystallization of amorphous semiconductor layer applied on substrate, involves positioning and exposing of substrate on specified position before or after exposure with excimer laser
The method involves positioning and exposing of a substrate (2) on a specified position before or after the exposure with an excimer laser (1). The position is specified on the basis of the pre-determined position, which is provided with the assembly of the semiconductor layer for the control elements. The pre-determined position is determined on the basis of a marking, to be exposed on the substrate. An independent claim is also included for a device for the crystallization of an amorphous semiconductor layer applied on a substrate.
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