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Single-crystalline Substrate for manufacturing GaN based epilayer, the Method of manufacturing the epilayer, LED and LD comprising the GaN based epilayer
Single-crystalline Substrate for manufacturing GaN based epilayer, the Method of manufacturing the epilayer, LED and LD comprising the GaN based epilayer
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机译：用于制造GaN基外延层的单晶衬底，制造该外延层的方法，包括该GaN基外延层的LED和LD
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摘要
There is provided a light emitting diode and a laser diode comprising a gallium nitride thin film made of a gallium nitride thin film for producing a single crystal substrate, a gallium nitride thin film manufacturing method for manufacturing a thin film single crystal substrate and gallium nitride. A gallium nitride thin film for producing a single crystal substrate according to the present invention is sapphire, is made of a silicon carbide, zinc oxide, silicon or gallium arsenide (GaAs), on the same plane, a nitrogen ion implantation pattern comprising a pattern formed repeatedly in a plurality of regular portions .; And and it characterized in that it comprises a nitrogen ion non-injection compartment to divide the pattern, it is possible to grow the growth of the gallium nitride thin film quickly with the prior art different methods, as a result, to improve the crystallinity and optical properties of the gallium nitride thin film can. In addition, the gallium nitride thin film manufacturing method using the single crystal substrate is produced can be easily and enhance the crystallinity and optical properties of gallium nitride thin films, light emission comprising a gallium nitride thin film made by the gallium nitride thin film for preparing single-crystal substrate diodes and laser diodes have the advantage of superior optical properties.
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