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QUANTUM DEVICE, QUANTUM LOGIC DEVICE, METHOD OF DRIVING QUANTUM LOGIC DEVICE, AND LOGIC CIRCUIT BY QUANTUM LOGIC DEVICE

机译:量子设备,量子逻辑设备,驱动量子逻辑设备的方法以及量子逻辑设备的逻辑电路

摘要

The invention aims to achieve a performance that exceeds the current CMOS technology in view of the miniaturization and power consumption, and also provide a technique for realizing the logic of the way that is inconsistent with the implementation of a classical converter using the conventional sequence circuit It shall be. ; The carrier is confined in the z direction of the first conductive member having a two-dimensional electron gas in the xy plane (101a, 101b) and the second and the conductive member (102a, 102b), the first conductive member (101a, 101b) the effects of a and a third conductive member (103a, 103b) and the first conductive member (101a, 101b) and the second conductive members (102a, 102b), the tunnel current isolation member 104 is easy to flow between the generating an electric field to impart, a first conductive member (101a, 101b) and the third by having a hard insulation member 105 to flow a tunnel current between the conductive members (103a, 103b), because of the potential to be applied to the third conductive members (103a, 103b) caused by the electric field affecting the subband of the first conductive member (101a, 101b).
机译:考虑到小型化和功耗,本发明旨在实现超过当前CMOS技术的性能,并且还提供一种用于实现与使用常规时序电路的传统转换器的实现方式不一致的逻辑方式的技术。应该。 ;载体在xy平面(101a,101b)中具有二维电子气的第一导电部件和第二导电部件(102a,102b)的z方向上被限制,第一导电部件(101a,101b) )在a和第三导电构件(103a,103b)以及第一导电构件(101a,101b)和第二导电构件(102a,102b)的作用下,隧道电流隔离构件104容易在其间产生电流。由于具有施加到第三导电体的电势,通过具有硬质绝缘构件105以使隧道电流在导电构件(103a,103b)之间流动,从而赋予第一导电构件(101a,101b)和第三电场由电场影响第一导电构件(101a,101b)的子带引起的导电构件(103a,103b)。

著录项

  • 公开/公告号KR100843492B1

    专利类型

  • 公开/公告日2008-07-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20067021407

  • 发明设计人 가타야마 야스나오;

    申请日2006-10-16

  • 分类号H01L29/06;H01L29/66;

  • 国家 KR

  • 入库时间 2022-08-21 19:51:51

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