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The logic circuit according to quantum logic device driving method and quantum devices, quantum logic devices, quantum logic device

机译:根据量子逻辑器件驱动方法的逻辑电路和量子器件,量子逻辑器件,量子逻辑器件

摘要

And to achieve performance beyond the current CMOS technology in terms of power consumption and SOLVED] miniaturization, is to provide a technique capable of realizing the logic circuits of a system consistent with the implementation of the classical computer using a sequential circuit existing . Electric field that gives first conductive member 101a with a two-dimensional electron gas in the xy plane carrier is confined in [MEANS FOR SOLVING PROBLEMS] z-direction, the second conductive member 102a and 101b, and 102b, the impact first conductive member 101a, to 101b an insulating member 104 easy to flow the third conductive member 103a to generate, and 103b, a tunneling current between the second conductive member 102a first conductive member 101a, and 101b, the 102b, the third first conductive member 101a, and 101b by an electric field and an insulating member 105 which is difficult to flow a tunnel current between the conductive member 103a, in 103b, generated by the potential applied third conductive member 103a, in 103b, it affects the sub-band first conductive member 101a, and 101b .
机译:并且为了在功耗和小型化方面实现超越当前CMOS技术的性能,将提供一种技术,该技术能够使用现有的时序电路来实现与经典计算机的实现相一致的系统的逻辑电路。在xy平面载体中使第一导电构件101a具有二维电子气的电场被限制在[解决问题的手段] z方向上,第二导电构件102a和101b以及102b,冲击第一导电构件101a被限制。绝缘材料104容易流过第三导电构件103a以产生绝缘电流104b,第二导电构件102a,第一导电构件101b与第二导电构件102b,第三导电构件101a和第三导电构件101b之间的隧穿电流为103b。通过电场和绝缘构件105,该绝缘构件105难以在由导电的第三导电构件103a,103b施加的电势在导电构件103a,103b之间产生隧道电流,从而影响子带第一导电构件101a,和101b。

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