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METHOD TO REDUCE GAS-PHASE REACTIONS IN A PECVD PROCESS WITH SILICON AND ORGANIC PRECURSORS TO DEPOSIT DEFECT-FREE INITIAL LAYERS

机译：用硅和有机前驱物减少无缺陷初始层的PECVD工艺中减少气相反应的方法

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摘要

A method for depositing a defect-free initiation layer by using silicon and organic precursors is provided to reduce problems related to adhesion and particle defect by flowing a gas mixture into a processing chamber. A method for depositing a defect-free initiation layer comprises the step of positioning a substrate in a processing chamber. An initiation gas mixture including at least one organosilicon compound and at least one oxidizing gas flows into the processing chamber(103). The flow rate of at least one organosilicon compound is ramped-up up to a final flow rate of the organosilicon compounds while depositing a first transition layer on the initiation layer(105). The gas mixture flows at the final flow rate of the at least one organosilicon compound. While a second transition layer is being deposited on the first transition layer, a flow rate of at least one porogen compound is ramped-up up to a final flow rate(109).

机译：提供了一种通过使用硅和有机前体来沉积无缺陷的引发层的方法，以通过使气体混合物流入处理室中来减少与粘附和颗粒缺陷有关的问题。沉积无缺陷起始层的方法包括将衬底放置在处理室中的步骤。包含至少一种有机硅化合物和至少一种氧化气体的引发气体混合物流入处理室（103）。至少一种有机硅化合物的流速增加到有机硅化合物的最终流速，同时在引发层（105）上沉积第一过渡层。气体混合物以至少一种有机硅化合物的最终流速流动。在第二过渡层沉积在第一过渡层上的同时，至少一种致孔剂化合物的流速逐渐增加至最终流速（109）。

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公开/公告号KR20080005140A

专利类型
公开/公告日2008-01-10

原文格式PDF
申请/专利权人 APPLIED MATERIALS INC.;
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申请/专利号KR20070068076
发明设计人 NGUYEN VU NGOC TRAN;YI SANG IN;ZHENG YI;CHAN KELVIN;AHN SANG H.;RAJAGOPALAN NAGARAJAN;YIM KANG SUB;DEMOS ALEXANDROS T.;LIU JOSEPHINE JU HWEI CHANG;
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申请日2007-07-06
分类号C23C16/30;H01L21/205;C23C16/442;C23C16/455;
国家 KR
入库时间 2022-08-21 19:54:22

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