FIELD EFFECT TRANSISTOR HAVING A STRESSED CONTACT ETCH STOP LAYER WITH REDUCED CONFORMALITY

• 1. 保形性、应力和化学气相沉积层成分独立可变的甚低温化学气相沉积工艺 [P] . 中国专利： CN1693536A . 2005-11-09
• 2. 保形性、应力和化学气相沉积层成分独立可变的甚低温化学气相沉积工艺 [P] . 中国专利： CN1693537A . 2005-11-09
• 3. Field effect transistor having a stressed contact etch stop layer with reduced conformality [P] . 美国专利： US7932166B2 . 2011-04-26

  机译： 具有应力接触蚀刻停止层且具有降低的保形性的场效应晶体管

• 4. A field effect transistor having a stressed contact etch stop layer with reduced conformality [P] . 英国专利： GB2454135A . 2009-04-29

  机译： 一种场效应晶体管，其具有受应力的接触蚀刻停止层，其保形性降低

• 5. A FIELD EFFECT TRANSISTOR HAVING A STRESSED CONTACT ETCH STOP LAYER WITH REDUCED CONFORMALITY [P] . 世界知识产权组织专利： WO2008027471A1 . 2008-03-06

  机译： 具有应力降低的应力接触式止动层的场效应晶体管

• 1. Top Contact Pentacene Organic Thin Film Field Effect Transistors [J] . ZHANG Su-mei, SHI Jia-wei, SHI Ying-xue, 半导体光子学与技术（英文版） . 2004,第004期
• 2. Hybrid Field-Effect Transistors and Photodetectors Based on Organic Semiconductor and CsPbI3 Perovskite Nanorods Bilayer Structure [J] . Yantao Chen, Xiaohan Wu, Yingli Chu, 纳微快报：英文版 . 2018,第004期
• 3. Boundary-layer eigen solutions for multi-field coupled equations in the contact interface [J] . 侯磊, 李涵灵, 张家健, 应用数学和力学：英文版 . 2010,第006期
• 4. Effects of high pressure hydrogen anneal process on performance and reliability in HfO2/SiO2 dielectric with contact etch stop layer stressor [C] . Seung Hyun Song, Min Sang Park, Kyong Taek Lee, Nanotechnology Materials and Devices Conference, 2009. NMDC '09 . 2009
• 5. Improved Contacts and Device Performance in MoS2 Transistors Using 2D Semiconductor Interlayers [D] . Andrews, Kraig . 2020
• 6. Multi-Layer SnSe Nanoflake Field-Effect Transistors with Low-Resistance Au Ohmic Contacts [O] . Sang-Hyeok Cho, Kwanghee Cho, No-Won Park, 2017
• 7. The addition of strain in uniaxially strained transistors by both SiN contact etch stop layers and recessed SiGe sources and drains [O] . Thibaud Denneulin, David Cooper, Jean-Michel Hartmann, 2012
• 8. Development of a Reduced Mindlin Hybrid Stress Thin Multilayer Plate Element with Application to Edge Contact Problems [R] . Spilker, R. L., Jakobs, D. M. 1985

• 1. A Spring-Layer Model for a Bi-Layered Plate-Strip with Initial Stress Through Imperfect Contact Interface [J] . Ahmet Dasdemir . 声音与振动(英文) . 2019,第3期
• 2. Fabrication of pentacene organic field-effect transistors with polyimide gate dielectric layer [J] . DONG Mao-jun ,TAO Chun-lan ,ZHANG Xu-hui . 光电子快报：英文版 . 2007,第6期
• 3. 具有负离子注入钝化层的氮化镓基场效应晶体管设计 [C] . 蒋知广 ,杜江锋 ,潘沛霖 . 第一届全国宽禁带半导体学术及应用技术会议 . 2015
• 4. 减小微电铸层残余应力的机理与方法 [A] . 宋畅 . 2018