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Single-Electron Tunnel Junction for a Complementary Metal-Oxide Device and Method of Manufacturing the Same

机译:互补金属氧化物器件的单电子隧道结及其制造方法

摘要

A method of providing a p-type substrate, disposing a pad oxide layer on the p-type substrate, disposing a nitride layer on the pad oxide layer, forming a nitride window in the nitride layer, disposing a field oxide in the nitride window, disposing a polysilicon gate over the field oxide, and diffusing a n-doped region in the p-type substrate, thereby forming at least one single-electron tunnel junction between the polysilicon gate and the n-doped region.
机译:提供一种提供p型衬底的方法,在该p型衬底上设置衬垫氧化物层,在该衬垫氧化物层上设置氮化物层,在氮化物层中形成氮化物窗口,在该氮化物窗口中设置场氧化物,在场氧化物上方设置多晶硅栅极,并在p型衬底中扩散n掺杂区域,从而在多晶硅栅极和n掺杂区域之间形成至少一个单电子隧道结。

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