首页>
外国专利>
Single-Electron Tunnel Junction for a Complementary Metal-Oxide Device and Method of Manufacturing the Same
Single-Electron Tunnel Junction for a Complementary Metal-Oxide Device and Method of Manufacturing the Same
展开▼
机译:互补金属氧化物器件的单电子隧道结及其制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of providing a p-type substrate, disposing a pad oxide layer on the p-type substrate, disposing a nitride layer on the pad oxide layer, forming a nitride window in the nitride layer, disposing a field oxide in the nitride window, disposing a polysilicon gate over the field oxide, and diffusing a n-doped region in the p-type substrate, thereby forming at least one single-electron tunnel junction between the polysilicon gate and the n-doped region.
展开▼