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Electronic devices created thereby and improved method for producing ultra low dielectric constant materials as intralevel or interlevel dielectrics in semiconductor devices in
Electronic devices created thereby and improved method for producing ultra low dielectric constant materials as intralevel or interlevel dielectrics in semiconductor devices in
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机译：由此产生的电子器件以及用于制造超低介电常数材料作为半导体器件中的层内或层间电介质的改进方法。
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摘要
A method for fabricating a thermally stable ultralow dielectric constant film including Si, C, O and H atoms in a parallel plate chemical vapor deposition process utilizing a plasma enhanced chemical vapor deposition ("PECVD") process is disclosed. Electronic devices containing insulating layers of thermally stable ultralow dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of a thermally stable ultralow dielectric constant film, specific precursor materials are used, such as, silane derivatives, for instance, diethoxymethylsilane (DEMS) and organic molecules, for instance, bicycloheptadiene and cyclopentene oxide.
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