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Purification of silicon by using electron beam, comprises inserting the silicon into a vacuum chamber, creating a vacuum in the vacuum chamber, and exposing the silicon to an electron beam to form melted silicon

机译:通过使用电子束纯化硅,包括将硅插入真空室中,在真空室中产生真空,并将硅暴露于电子束中以形成熔化的硅

摘要

The purification of silicon by using electron beam, comprises inserting the silicon into a vacuum chamber (1), creating a vacuum in the chamber, exposing the silicon to an electron beam to form melted silicon, evaporating a first group of impurity elements from the melted silicon through exposure to an electron beam, creating another vacuum in the chamber, introducing water into the chamber, reacting the water with a second group of impurity elements in the melted silicon to form an oxide, and evaporating the oxide from the melted silicon through exposure to an electron beam. The purification of silicon by using electron beam, comprises inserting the silicon into a vacuum chamber (1), creating a vacuum in the chamber, exposing the silicon to an electron beam to form melted silicon, evaporating an first group of impurity elements from the melted silicon through exposure to an electron beam, creating another vacuum in the chamber, introducing water into the chamber, reacting the water with a second group of impurity elements in the melted silicon to form an oxide, and evaporating the oxide from the melted silicon through exposure to an electron beam. The first group of impurity elements comprises phosphorus, arsenic and antimony and exhibits a steam pressure in a vacuum, higher than the silicon. The second group of impurity elements comprises boron and carbon and exhibits a steam pressure in a vacuum, equal to or lower than the silicon. The first created vacuum is higher than the second created vacuum. The melted silicon is irradiated to evaporate the elements and the oxide using same electron gun (3), which works with a cold cathode and a glow discharge. The melted silicon is solidified to form a silicon lump to aggregate the metallic elements at an end of the silicon lump, and the end of the silicon lump is cut. An independent claim is included for a device for purifying silicon by using electron beam.
机译:通过使用电子束纯化硅,包括将硅插入真空室(1),在室中产生真空,将硅暴露于电子束以形成熔融硅,并从熔融的硅中蒸发掉第一组杂质元素通过暴露于电子束中的硅,在腔室内产生另一个真空,将水引入腔室内,使水与熔融硅中的第二组杂质元素反应形成氧化物,并通过暴露从熔融硅中蒸发出氧化物到电子束通过使用电子束纯化硅,包括将硅插入真空室(1)中,在室中产生真空,将硅暴露于电子束以形成熔融硅,并从熔融态中蒸发掉第一组杂质元素通过暴露于电子束中的硅,在腔室内产生另一个真空,将水引入腔室内,使水与熔融硅中的第二组杂质元素反应形成氧化物,并通过暴露从熔融硅中蒸发出氧化物到电子束第一组杂质元素包括磷,砷和锑,并且在真空中表现出的蒸汽压高于硅。第二组杂质元素包括硼和碳,并且在真空中表现出等于或低于硅的蒸汽压。第一个创建的真空度高于第二个创建的真空度。使用相同的电子枪(3)照射熔化的硅以蒸发元素和氧化物,该电子枪可与冷阴极和辉光放电一起工作。熔化的硅被固化以形成硅块,以在硅块的端部聚集金属元素,并且将硅块的端部切割。通过使用电子束纯化硅的装置包括独立权利要求。

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