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Vertical high volt semiconductor device`s e.g. thyristor, lip, has lateral semiconductor device provided in boundary region adjacent to cell field to contribute to current load-carrying capacity when high volt semiconductor device is on
Vertical high volt semiconductor device`s e.g. thyristor, lip, has lateral semiconductor device provided in boundary region adjacent to cell field to contribute to current load-carrying capacity when high volt semiconductor device is on
The lip has a semiconductor body (1) with a semiconductor layer (3) of a conductive type, where the body has an inner area with a cell field (Z) in its front side (4) and a boundary region (R) partly surrounding the inner area. A lateral semiconductor device e.g. lateral field effect transistor, is provided in the region adjacent to the field. The device contributes to its current load-carrying capacity in switched on condition of a high volt semiconductor device e.g. thyristor, and is closable in switched off condition of the high volt semiconductor device. An independent claim is also included for a procedure for manufacturing a lip for an insulated gate bipolar transistor (IGBT).
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