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Power semiconductor element and production process has field electrode structure with at least two first field electrodes and a second field electrode in a second direction with dielectric separation between them
Power semiconductor element and production process has field electrode structure with at least two first field electrodes and a second field electrode in a second direction with dielectric separation between them
A power semiconductor element comprises a semiconductor body (100) with a drift zone (11) and a transition (16) from this to a further component zone (12) that forms a space charge on applying a blocking voltage. There is a field electrode structure (40) comprising at least two adjacent first field electrodes (41) in a second direction isolated and separated from the drift zone and from one another by a dielectric (33,61) and at least one second field electrode (42) in a second direction neighboring and overlapping the first and isolated from it. Independent claims are also included for the following: (A) Production processes for a field electrode structure;and (B) A production process for a structured layer.
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