首页> 外国专利> Power semiconductor component and production process has semiconductor body with drift zone, transition and a two-section dielectric layer between the drift zone and a field electrode

Power semiconductor component and production process has semiconductor body with drift zone, transition and a two-section dielectric layer between the drift zone and a field electrode

机译:功率半导体组件和生产工艺具有带漂移区,过渡区和漂移区与场电极之间的两部分介电层的半导体本体

摘要

A power semiconductor component comprises a semiconductor body with a drift zone and a transition between it and a further component zone such that application of a blocking voltage to the transition produces a space charge zone in a first direction. There is a field electrode by the drift zone in a second direction and isolated from the semiconductor body by a dielectric layer comprising two sections, that being nearer the transition having the high dielectric constant. An independent claim is also included for a production process for the above.
机译:功率半导体部件包括半导体本体,该半导体本体具有漂移区以及在其与另一部件区之间的过渡部,使得向过渡部施加阻挡电压在第一方向上产生空间电荷区。在第二方向上通过漂移区存在场电极,并且通过包括两个部分的电介质层将其与半导体本体隔离,所述电介质层更靠近具有高介电常数的过渡。上述内容的生产过程也包括独立权利要求。

著录项

  • 公开/公告号DE102005043916B3

    专利类型

  • 公开/公告日2006-12-21

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AUSTRIA AG;

    申请/专利号DE20051043916

  • 发明设计人 SCHULZE HANS-JOACHIM;MAUDER ANTON;

    申请日2005-09-14

  • 分类号H01L29/06;H01L29/78;H01L29/872;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:46

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