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LIGHT-EMITTING DIODE USING CURRENT SPREADING LAYER
LIGHT-EMITTING DIODE USING CURRENT SPREADING LAYER
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机译：使用电流扩散层的发光二极管
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摘要
A light emitting diode using a current spreading layer is provided to improve the luminance of the diode by positioning the current diffusion layer between an N-electrode and an n-type semiconductor layer. A p-type semiconductor layer(50) is formed on one side of an active layer(40). A p-type electrode(60) is formed on one side of the p-type semiconductor layer, and an n-type semiconductor layer(30) is formed on the other side of the active layer. A current diffusion layer(80) is formed on one side of the n-type semiconductor layer, and an n-type electrode(70) is formed on one side of the current spreading layer. The current spreading layer contains a GaN layer doped with high concentration of silicon, a superlattice current spreading layer of InGaN/GaN, or SiGaN layer.
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