首页> 外国专利> METHODS FOR MANUFACTURING REFLECTIVE OPTICAL ELEMENTS, REFLECTIVE OPTICAL ELEMENTS, EUV-LITHOGRAPHY APPARATUSES AND METHODS FOR OPERATING OPTICAL ELEMENTS AND EUV-LITHOGRAPHY APPARATUSES, METHODS FOR DETERMINING THE PHASE SHIFT, METHODS FOR DETERMINING THE LAYER THICKNESS, AND APPARATUSES FOR CARRYI

METHODS FOR MANUFACTURING REFLECTIVE OPTICAL ELEMENTS, REFLECTIVE OPTICAL ELEMENTS, EUV-LITHOGRAPHY APPARATUSES AND METHODS FOR OPERATING OPTICAL ELEMENTS AND EUV-LITHOGRAPHY APPARATUSES, METHODS FOR DETERMINING THE PHASE SHIFT, METHODS FOR DETERMINING THE LAYER THICKNESS, AND APPARATUSES FOR CARRYI

机译:制造反射性光学元件的方法,反射性光学元件,EUV光刻技术以及操作光学元件和EUV光刻技术的方法,确定相移的方法,确定方法和层的方法

摘要

The invention relates to a method for manufacturing of a multilayer system (25) with a cap layer system (30), in particular for a reflective optical element for the extreme ultraviolet up to the soft x-ray wavelength range, comprising the steps of: 1. preparing a coating design for the multilayer system (25) with cap layer system (30); 2. coating a substrate (20) with the multilayer system (25) with cap layer system (30); 3. spatially resolved measurement of the coated substrate in terms of reflectance and photoelectron current in at least one surface point; 4. comparison of the measured data with data modelled for different thicknesses of the layers (31, 32, 33) of the cap layer system (30) and/or the layers (21, 22, 23, 24) of the multilayer system (25) for determining of the thickness distribution obtained by the coating; 5. if necessary, adjusting of the coating parameters and repeating steps 2 to 5 until the coated thickness distribution coincides with the design. The invention also relates to further manufacturing methods, reflective optical elements, EUV-lithography apparatuses, and methods for operating optical elements and EUV-lithography apparatuses as well as methods for determining the phase shift, methods for determining the layer thickness, and apparatuses for carrying out the methods.
机译:本发明涉及一种用于制造具有覆盖层系统(30)的多层系统(25)的方法,特别是用于在软x射线波长范围内具有极紫外光的反射光学元件,该方法包括以下步骤: 1.准备用于具有盖层系统(30)的多层系统(25)的涂层设计; 2.用具有覆盖层系统(30)的多层系统(25)涂覆基底(20); 3.在至少一个表面点上的反射率和光电子电流方面的空间分辨的测量。 4.比较测量的数据和针对盖层系统(30)的层(31、32、33)和/或多层系统的层(21、22、23、24)的不同厚度建模的数据( 25)确定由涂层获得的厚度分布; 5.如有必要,调整涂层参数并重复步骤2至5,直到涂层厚度分布与设计相符。本发明还涉及另外的制造方法,反射光学元件,EUV光刻设备以及用于操作光学元件和EUV光刻设备的方法,以及用于确定相移的方法,用于确定层厚度的方法以及用于承载的设备出方法。

著录项

  • 公开/公告号EP1730597A2

    专利类型

  • 公开/公告日2006-12-13

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT AG;

    申请/专利号EP20050729571

  • 申请日2005-03-04

  • 分类号G03F7/20;G01M11;

  • 国家 EP

  • 入库时间 2022-08-21 20:50:40

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