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METHOD OF FABRICATING SILICON/DIELECTRIC MULTI-LAYER SEMICONDUCTOR STRUCTURES USING LAYER TRANSFER TECHNOLOGY AND ALSO A THREE-DIMENSIONAL MULTI-LAYER SEMICONDUCTOR DEVICE AND STACKED LAYER TYPE IMAGE SENSOR USING THE SAME METHOD, AND A METHOD OF MANUFACTURING A THREE-DIMENSIONAL MULTI- LAYER SEMICONDUCTOR DEVICE AND THE ST
METHOD OF FABRICATING SILICON/DIELECTRIC MULTI-LAYER SEMICONDUCTOR STRUCTURES USING LAYER TRANSFER TECHNOLOGY AND ALSO A THREE-DIMENSIONAL MULTI-LAYER SEMICONDUCTOR DEVICE AND STACKED LAYER TYPE IMAGE SENSOR USING THE SAME METHOD, AND A METHOD OF MANUFACTURING A THREE-DIMENSIONAL MULTI- LAYER SEMICONDUCTOR DEVICE AND THE ST
The present invention relates to semiconductor process technology. That is, the present invention relates to the fabrication of a three-dimensional semiconductor structure and a semiconductor device and an optical image sensor having the device as an active pixel. According to the present invention, a buffer oxide film, a nitride film, and an ONO dielectric layer are formed on a handle wafer. A semiconductor layer and an oxide film are formed on a donor wafer. The donor wafer is turned over through a layer transfer process and is then bonded to a top surface of the handle wafer. Silicon of the donor wafer is then removed. In the same manner, blue, green, and red diode layers, and a transistor layer are sequentially formed. A metal layer is formed on the transistor layer. Inter-elements contact and pixel separation processes are performed and a support layer is bonded. The whole device is turned over and the nitride film is etched using an etch-stop layer, thus removing the handle wafer. After the elements are separated, packaging is performed to complete the device. Therefore, a back illuminated image sensor of a multi-layer structure can be provided.
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