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High performance amine based no-flow underfill materials for flip chip applications

机译:高性能胺基无流动底部填充材料,用于倒装芯片应用

摘要

Amine-based no-flow underfill materials and a method to produce flip-chip devices electrically bonded to a substrate are described. The no-flow underfill material includes an amine-based curing agent and a fluxing agent, which activates at a fluxing temperature and is neutral at the temperatures lower than the fluxing temperature. The fluxing agent of the no-flow underfill material heated to the activation temperature generates a reactive acid in-situ during chip attachment process to facilitate joint formation. The no-flow underfill material is formed on the substrate. A chip is placed on the no-flow underfill material formed on the substrate. A temperature is increased to activate the fluxing agent. The temperature is further increased to form conductive joints between the chip and the substrate. Further, the no-flow underfill material is cured. The conductive joints between the chip and the substrate may be lead-free.
机译:描述了基于胺的无流动底部填充材料和生产电结合到基板的倒装芯片器件的方法。不流动的底部填充材料包括基于胺的固化剂和助熔剂,其在助熔温度下活化,并且在低于助熔温度的温度下呈中性。加热到活化温度的无流动性底部填充材料的助熔剂会在芯片连接过程中在原位生成反应性酸,以促进接头的形成。不流动的底部填充材料形成在基板上。将芯片放置在基板上形成的不流动底部填充材料上。升高温度以激活助熔剂。进一步提高温度以在芯片和衬底之间形成导电接头。此外,不流动的底部填充材料被固化。芯片和基板之间的导电接头可以是无铅的。

著录项

  • 公开/公告号US7279359B2

    专利类型

  • 公开/公告日2007-10-09

    原文格式PDF

  • 申请/专利权人 TIAN-AN CHEN;DAOQIANG LU;

    申请/专利号US20040949995

  • 发明设计人 TIAN-AN CHEN;DAOQIANG LU;

    申请日2004-09-23

  • 分类号H01L21/44;

  • 国家 US

  • 入库时间 2022-08-21 21:01:02

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