首页> 外国专利> Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters

Method of controlling chamber parameters of a plasma reactor in accordance with desired values of plural plasma parameters, by translating desired values for the plural plasma parameters to control values for each of the chamber parameters

机译：通过转换多个等离子体参数的期望值以控制每个腔室参数的值，根据多个等离子体参数的期望值来控制等离子体反应器的腔室参数的方法

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摘要

Plural chamber parameters of a plasma reactor are controlled in accordance with desired values of plural plasma parameters, by concurrently translating desired values for the plural plasma parameters to control values for each of plural chamber parameters, and then setting each of the chamber parameters to corresponding ones of the control values. The translating consists of the following steps: (a) for each one of the chamber parameters, ramping the level of the one chamber parameter while sampling RF electrical parameters at an RF bias power input to the wafer support pedestal and computing from each sample of the RF electrical parameters the values of plural plasma parameters, and storing the values with the corresponding levels of the one chamber parameter as corresponding chamber parameter data; (b) for each one of the chamber parameters, deducing, from the corresponding chamber parameter data, a single variable function for each of the plural plasma parameters having the one chamber parameter as an independent variable; (c) from combinations of the functions, constructing surfaces defining simultaneous values of all of the chamber parameters, each respective surface corresponding to a respective constant value of one of the plural plasma parameters, and storing the surfaces.

机译：通过同时转换多个等离子体参数的期望值以控制多个腔室参数的每个的值，然后将每个腔室参数设置为相应的参数，根据多个等离子体参数的期望值来控制等离子体反应器的多个腔室参数。控制值。转换包括以下步骤：（a）对于每个腔室参数，在输入到晶片支撑基座的RF偏置功率下采样RF电参数的同时，对一个腔室参数的电平进行倾斜处理，并从每个射频电参数为多个等离子体参数的值，并以一个腔室参数的对应水平存储该值作为对应的腔室参数数据; （b）对于每个腔室参数，从相应的腔室参数数据中推导针对具有一个腔室参数作为自变量的多个等离子体参数中的每个的单个变量函数; （c）从功能的组合中，构造定义所有腔室参数的同时值的表面，每个相应表面对应于多个等离子体参数之一的相应常数值，并存储这些表面。

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公开/公告号US2006278610A1

专利类型
公开/公告日2006-12-14

原文格式PDF
申请/专利权人 DANIEL J. HOFFMAN;
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申请/专利号US20060508543
发明设计人 DANIEL J. HOFFMAN;
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申请日2006-08-23
分类号G01L21/30;C23F1;
国家 US
入库时间 2022-08-21 21:05:44

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