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The thin film the liquid phase with in order the process which
The thin film the liquid phase with in order the process which
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机译：薄膜液相以有序化的过程
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摘要
PROBLEM TO BE SOLVED: To obtain an n-type ZnSe single crystal thin film high in quality and high in carrier density, and to provide a method for producing the film. ;SOLUTION: A growing solvent (In) and a solute (ZnSe), a melt-back solution (Zn) 9, and a thermal treating solution (Zn/ZnSe) 11 are charged in a growing solution holder 3, a melt-back solution holder 2, and a thermal treatment solution holder 4, respectively, and the upper parts of the holders 2, 3, 4 are covered with a liquid sealing agent (B2O3) 8. A single crystal substrate 7 for the epitaxial growth is set into a cavity 6 disposed in a slider 5. A slide board 1 is inserted into an oven core pipe 12 in a horizontal electric oven 13, heated and maintained at 905°C to produce a growing solution 10 (ZnSe/In) in the growing solution holder, and subsequently cooled to 900°C. The cavity is transferred with the slider to the bottom of the melt-back solution holder to melt back, transferred to the bottom of the growing solution holder to raise the single crystal thin film of the ZnSe on the substrate, further transferred to the bottom of the thermal treatment solution holder to bring the raised thin film on the substrate into contact with the thermal treatment solution, and subsequently maintained at 850°C for 30min to treat the thin film in the melted liquid of Zn.;COPYRIGHT: (C)1998,JPO
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机译：要解决的问题：获得高质量和高载流子密度的n型ZnSe单晶薄膜，并提供一种制造该薄膜的方法。 ;解决方案：将生长溶剂（In）和溶质（ZnSe），回熔溶液（Zn）9和热处理溶液（Zn / ZnSe）11装入生长溶液支架3中，进行回熔溶液保持器2和热处理溶液保持器4，以及保持器2、3、4的上部被液体密封剂（B 2 O 3
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