首页> 外国专利> SPUTTERING TARGET FOR HIGHLY RESISTANT TRANSPARENT CONDUCTIVE FILM, AND HIGHLY RESISTANT TRANSPARENT CONDUCTIVE FILM, AND MANUFACTURING METHOD OF HIGHLY RESISTANT TRANSPARENT CONDUCTIVE FILM

SPUTTERING TARGET FOR HIGHLY RESISTANT TRANSPARENT CONDUCTIVE FILM, AND HIGHLY RESISTANT TRANSPARENT CONDUCTIVE FILM, AND MANUFACTURING METHOD OF HIGHLY RESISTANT TRANSPARENT CONDUCTIVE FILM

机译:高电阻透明导电膜,高电阻透明导电膜的溅射靶及高电阻透明导电膜的制造方法

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target for a highly resistant transparent conductive film which can be basically used by a DC magnetron sputtering apparatus, and deposit a transparent and highly resistant film, a highly resistant transparent conductive film using the same; and to provide a manufacturing method thereof.;SOLUTION: The sputtering target for the highly resistant transparent conductive film to deposit the highly resistant transparent conductive film with the resistivity of about 0.9 10-3 to 10 10-3cm contains indium oxide and tin oxide as necessary, and also contains a silicon oxide, in which the relative density is 100% and the Fc density is confined to 15 ppm.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种用于高阻隔性透明导电膜的溅射靶,其可以基本上由DC磁控溅射设备使用,并沉积透明且高阻隔的膜,一种使用该靶材的高阻隔透明导电性膜;解决方案:高电阻透明导电膜的溅射靶,用于沉积电阻率为0.9 10 -3 至10 10 -3 cm根据需要包含氧化铟和氧化锡,还包含氧化硅,其中相对密度为100%,Fc密度限制为15 ppm 。;版权所有:(C)2007,日本特许厅

著录项

  • 公开/公告号JP2007138266A

    专利类型

  • 公开/公告日2007-06-07

    原文格式PDF

  • 申请/专利权人 MITSUI MINING & SMELTING CO LTD;

    申请/专利号JP20050335600

  • 发明设计人 TAKAHASHI SEIICHIRO;

    申请日2005-11-21

  • 分类号C23C14/34;C04B35;

  • 国家 JP

  • 入库时间 2022-08-21 21:11:33

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