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Depositing films on substrate, e.g. liner or barrier layer in semiconductor devices, by depositing first films of target material with magnetron, and depositing second film using reactive physical vapor deposition process with magnetron
Depositing films on substrate, e.g. liner or barrier layer in semiconductor devices, by depositing first films of target material with magnetron, and depositing second film using reactive physical vapor deposition process with magnetron
Depositing films on a substrate comprises depositing a first film of target material with a magnetron at a first inner offset position relative to the axis, and depositing a second film using a reactive physical vapor deposition process with the magnetron at a second outer offset position. Depositing films on a substrate using a plasma chamber having a target disposed about an axis and a magnetron rotatable about the axis at an adjustable offset from the axis to vary the pattern of ions impinging on the target, comprises: (a) depositing a first film of target material with the magnetron at a first inner offset position relative to the axis; and (b) depositing in the same chamber, a second film using a reactive physical vapor deposition process with the magnetron at a second outer offset position.
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