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METHOD FOR MEASURING ELECTRICAL CHARACTERISTICS OF WAFER USING A ATOMIC FORCE MICORSCOPE AND METHOD FOR MANUFACTURING A TIP OF ATOMIC FORCE MICROSCOPE
METHOD FOR MEASURING ELECTRICAL CHARACTERISTICS OF WAFER USING A ATOMIC FORCE MICORSCOPE AND METHOD FOR MANUFACTURING A TIP OF ATOMIC FORCE MICROSCOPE
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机译：用原子力微镜测量晶片的电特性的方法和制造原子力微镜的尖端的方法
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摘要
The invention, and the conductive probe, and a cantilever for supporting the probe, the support and the wafer the wafer having a pattern to be measured by atomic force microscopy can be fine operation in units smaller than the size of the wafer a fine pattern including a scanner for moving the probe to a lower portion, wherein the wafer is located on top of the scanner by an atomic force microscope is provided in the vacuum chamber, and the wafer is a current or voltage to the probe is to ground, the probe and measuring the electrical signal of the wafer using the interatomic repulsive force between the fine pattern of the wafer, the measured electrical signal How to measure the electrical characteristics of a wafer imaged by using an atomic force microscope for measuring the electrical characteristics of the wafer and to a method of producing an atomic force microscope probe.
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