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Method for measuring silicide abundance ratio, method for measuring heat treatment temperature, method for manufacturing semiconductor device, and X-ray light receiving element
Method for measuring silicide abundance ratio, method for measuring heat treatment temperature, method for manufacturing semiconductor device, and X-ray light receiving element
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机译:硅化物丰度比的测定方法,热处理温度的测定方法,半导体装置的制造方法以及X射线受光元件
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摘要
A measurement substrate 100 in which a silicon oxide film 102 , a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer 104 are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film 102 and the intensity of hard X-rays emitted from titanium in the titanium silicide layer 104.
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