首页> 外国专利> Method for measuring silicide abundance ratio, method for measuring heat treatment temperature, method for manufacturing semiconductor device, and X-ray light receiving element

Method for measuring silicide abundance ratio, method for measuring heat treatment temperature, method for manufacturing semiconductor device, and X-ray light receiving element

机译:硅化物丰度比的测定方法,热处理温度的测定方法,半导体装置的制造方法以及X射线受光元件

摘要

A measurement substrate 100 in which a silicon oxide film 102 , a polysilicon layer 103 and a titanium silicide layer 104 are formed over a silicon substrate 101 in this order is prepared. The measurement substrate 100 is irradiated with X-rays so that the proportions of three types of silicides with different compositions in the titanium silicide layer 104 are measured based on the intensity of hard X-rays emitted from oxygen in the silicon oxide film 102 and the intensity of hard X-rays emitted from titanium in the titanium silicide layer 104.
机译:制备其中在硅衬底101上依次形成氧化硅膜102,多晶硅层103和硅化钛层104的测量衬底100。用X射线辐照测量基板100,从而基于从氧化硅膜102和氧化硅膜102中的氧发出的硬X射线的强度来测量在硅化钛层104中具有不同组成的三种类型的硅化物的比例。硅化钛层104中从钛发射的硬X射线的强度。

著录项

  • 公开/公告号JP3784371B2

    专利类型

  • 公开/公告日2006-06-07

    原文格式PDF

  • 申请/专利权人 松下電器産業株式会社;

    申请/专利号JP20030002383

  • 发明设计人 鼓谷 昭彦;奥野 泰利;

    申请日2003-01-08

  • 分类号H01L21/66;G01N23/223;H01L21/28;

  • 国家 JP

  • 入库时间 2022-08-21 21:49:18

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