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MEASURING METHOD OF SILICIDE ABUNDANCE RATIO AND HEAT PROCESSING TEMPERATURE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND X-RAY RECEIVING ELEMENT
MEASURING METHOD OF SILICIDE ABUNDANCE RATIO AND HEAT PROCESSING TEMPERATURE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND X-RAY RECEIVING ELEMENT
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机译：硅化物丰度比和热处理温度的测量方法，半导体器件的制造方法以及X射线接收元件
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摘要
PROBLEM TO BE SOLVED: To provide a measuring method capable of easily and precisely measuring the abundance ratio of multiple kinds of silicides having a different combining ratio.;SOLUTION: A substrate 100 for measuring is prepared by forming a silicon oxide film 102, a polysilicon layer 103, and a titanium silicide layer 104 on a silicon substrate 101 in this sequence. The substrate 100 for measuring is irradiated with X-ray, and the abundance ratio of three kinds of silicides having different combining ratio of the titanium silicide layer 104 is measured from the strength of a hart X-ray emitted from oxygen of the silicon oxide film 102, and the strength of the hard X-ray emitted from the titanium of the titanium silicide layer 104.;COPYRIGHT: (C)2004,JPO&NCIPI
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