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I. T. O sintered body, I. and manufacturing method thereof T. O thin film
I. T. O sintered body, I. and manufacturing method thereof T. O thin film
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机译：I.O.O烧结体，I。及其制造方法
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摘要
PROBLEM TO BE SOLVED: To obtain a sintered material having high transparency and stable and reproducible specific resistance by including indium oxide (In2O3), tin oxide (SnO2) and scandium oxide (Sc2O3) as main components. SOLUTION: The objective sintered material is produced by mixing powder of In2O3, SnO2 and Sc2O3 as main components, forming the mixture and sintering by heating. The weight ratio of In2O3 and Sc2O3 to SnO2 (In2O3+Sc2O3):SnO2 is preferably 99-93:1-7 and the weight ratio of Sc2O3 to In2O3 (In2O3:Sc2O3) is preferably 99.8-60:0.2-40. An I.T.O thin film is produced by the evaporation of the sintered material. Preferably, Sc is uniformly dispersed between the surface of the thin film to the substrate at the same quantities. The same volume resistivity can be attained independent of the Sn content in the thin film. The thickness of the film can be increased within a range not to deteriorate the transparency (=80%) as a transparent conductive film and the overall resistance of the film can be decreased.
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机译：解决的问题：通过包含氧化铟（In 2 O 3），氧化锡（SnO 2）和氧化dium（Sc 2 O 3）作为主要成分，获得具有高透明度和稳定且可再现的电阻率的烧结材料。解决方案：通过将In2O3，SnO2和Sc2O3的粉末作为主要成分进行混合，形成混合物并加热烧结来生产目标烧结材料。 In 2 O 3和Sc 2 O 3与SnO 2的重量比（In 2 O 3 + Sc 2 O 3）∶SnO 2优选为99-93∶1-7，Sc 2 O 3与In 2 O 3的重量比（In 2 O 3 ∶Sc 2 O 3）优选为99.8-60∶0.2-40。通过烧结材料的蒸发产生I.T.O薄膜。优选地，Sc以相同的量均匀地分散在薄膜的表面与基板之间。可以得到与薄膜中的Sn含量无关的相同的体积电阻率。可以在不损害透明导电膜的透明性（＞ ＝ 80％）的范围内增加膜的厚度，并且可以降低膜的总电阻。
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