首页> 外国专利> Production of a film based on silicon dioxide used in the production of a semiconductor device comprises applying a coating solution on a substrate to form a film and drying, heat treating, etching, and further heat treating

Production of a film based on silicon dioxide used in the production of a semiconductor device comprises applying a coating solution on a substrate to form a film and drying, heat treating, etching, and further heat treating

机译：用于半导体器件生产中的基于二氧化硅的膜的生产包括在基底上施加涂布溶液以形成膜并干燥，热处理，蚀刻和进一步热处理

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Production of a film (4) based on silicon dioxide comprises applying a coating solution on a substrate (1) to form a film and drying, heat treating the layer obtained, selectively etching the film, and heat treating to improve the hardness of the surface. An independent claim is also included for the film produced.

机译：基于二氧化硅的膜（4）的生产包括在基底（1）上涂覆涂料溶液以形成膜并干燥，热处理所获得的层，选择性地蚀刻膜，以及进行热处理以提高表面硬度。。对于制作的电影也包括独立权利要求。

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公开/公告号DE102004052411A1

专利类型
公开/公告日2005-06-09

原文格式PDF
申请/专利权人 TOKYO OHKA KOGYO CO. LTD.;
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申请/专利号DE20041052411
发明设计人 SHIBUYA TATSUHIKO;FUJII YASUSHI;SATO ISAO;
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申请日2004-10-28
分类号H01L21/314;H01L21/3105;C30B33/08;
国家 DE
入库时间 2022-08-21 22:00:40

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