首页> 外国专利> Semiconductor chip breaking strength increasing method for use during manufacturing of chips, involves applying coating on backside of wafer for protecting chips from physical or chemical effects, where thickness of coating is large

Semiconductor chip breaking strength increasing method for use during manufacturing of chips, involves applying coating on backside of wafer for protecting chips from physical or chemical effects, where thickness of coating is large

机译：在芯片制造过程中使用的提高半导体芯片断裂强度的方法，该方法包括在晶圆背面上涂覆涂层，以保护芯片免受物理或化学作用的影响，涂层厚度较大

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摘要

The method involves isolating upper and back sides (3, 4) of a wafer (1). A coating (5) e.g. imides or a lacquer, is applied on the back side of the wafer before isolating semiconductor chips, where thickness of the coating is large. The coating is applied for protecting the semiconductor chips from physical or chemical effects. The coating is also applied on the upper side of the wafer.

机译：该方法包括隔离晶片（1）的上侧和背侧（3、4）。涂层（5）例如在隔离涂层厚度较大的半导体芯片之前，先在晶片的背面上涂一层亚胺或清漆。该涂层用于保护半导体芯片免受物理或化学作用。涂层也被施加在晶片的上侧。

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公开/公告号DE102004008475A1

专利类型
公开/公告日2005-09-29

原文格式PDF
申请/专利权人 INFINEON TECHNOLOGIES AG;
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申请/专利号DE20041008475
发明设计人 MARIANI FRANCO;
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申请日2004-02-20
分类号H01L21/56;H01L21/78;
国家 DE
入库时间 2022-08-21 22:00:53

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