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METHOD FOR MANUFACTURING LOW TEMPERATURE POLYCRYSTALLINE SILICON TFT-LCD ARRAY SUBSTRATE USING FALC PROCESS, PARTICULARLY REGARDING TO REDUCING METAL IMPURITIES AFTER CRYSTALLIZATION AND MINIMIZING CRYSTALLIZATION DEFECT
METHOD FOR MANUFACTURING LOW TEMPERATURE POLYCRYSTALLINE SILICON TFT-LCD ARRAY SUBSTRATE USING FALC PROCESS, PARTICULARLY REGARDING TO REDUCING METAL IMPURITIES AFTER CRYSTALLIZATION AND MINIMIZING CRYSTALLIZATION DEFECT
PURPOSE: A method for manufacturing a low temperature polycrystalline silicon TFT-LCD array substrate using an FALC(Field Aided lateral Crystallization) process is provided to reduce metal impurities after crystallization by reducing a use amount of a metal material and minimize a crystallization defect by optimizing strength and direction of an electric field in a channel area when power supply is applied. CONSTITUTION: In manufacturing an amorphous silicon TFT-LCD(Thin Film Transistor-Liquid Crystal Display) array substrate, a metal layer which is a crystallization catalyst is selectively deposited at a source area or drain area of an amorphous silicon thin film. Negative power supply is applied to the selected area of the amorphous silicon thin film. Mutually facing surfaces of source and drain electrodes(130,140) of each TFT(100) are formed in a convex shape.
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