首页> 外国专利> ASYMMETRIC WAVEGUIDE LASER DIODE, CAPABLE OF INCREASING LUMINOUS EFFICIENCY, REDUCING OPTICAL LOSS, AND LOWERING OPERATING CURRENT

ASYMMETRIC WAVEGUIDE LASER DIODE, CAPABLE OF INCREASING LUMINOUS EFFICIENCY, REDUCING OPTICAL LOSS, AND LOWERING OPERATING CURRENT

机译:非对称波导管激光二极管,能够提高发光效率,减少光学损耗并降低工作电流

摘要

PURPOSE: An asymmetric waveguide laser diode is provided to lower threshold current density and increase a slope effect by reducing optical loss of a long wavelength laser diode. CONSTITUTION: An asymmetric waveguide laser diode includes an active layer, an n-cladding layer, a p-cladding layer, and a substrate. The active layer includes a first side and a second side. The n-cladding layer is formed on the first side of the active layer. The p-cladding layer is formed on the second side of the active layer. The substrate is used for supporting a stacked structure including the active layer and the cladding layers. A refractive index of the p-cladding layer is lower than a refractive index of the n-cladding layer.
机译:目的:提供非对称波导激光二极管,以降低阈值电流密度并通过减少长波长激光二极管的光损耗来增加斜率效应。组成:非对称波导激光二极管,包括有源层,n包层,p包层和衬底。有源层包括第一侧面和第二侧面。 n覆盖层形成在有源层的第一侧上。 p覆盖层形成在有源层的第二侧上。基板用于支撑包括有源层和覆层的堆叠结构。 p覆盖层的折射率低于n覆盖层的折射率。

著录项

  • 公开/公告号KR20040096068A

    专利类型

  • 公开/公告日2004-11-16

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20030028872

  • 发明设计人 SONG DAE SEONG;KIM TAEK;

    申请日2003-05-07

  • 分类号H01S3/0941;

  • 国家 KR

  • 入库时间 2022-08-21 22:06:32

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