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首页> 外文会议>High-power diode laser technology and applications XVI >Extreme Triple Asymmetric (ETAS) Epitaxial Designs for Increased Efficiency at High Powers in 9xx-nm Diode Lasers
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Extreme Triple Asymmetric (ETAS) Epitaxial Designs for Increased Efficiency at High Powers in 9xx-nm Diode Lasers

机译：极端三重非对称（ETAS）外延设计，可提高9xx nm二极管激光器在高功率下的效率

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摘要

Broad area lasers that are tailored to be most efficient at the highest achievable optical output power are sought by industry to decrease operation costs and improve system performance. Devices using Extreme-Double-ASymmetric (EDAS) epitaxial designs are promising candidates for improved efficiency at high optical output powers due to low series resistance, low optical loss and low carrier leakage. However, EDAS designs leverage ultra-thin p-side waveguides, meaning that the optical mode is shifted into the n-side waveguide, resulting in a low optical confinement in the active region, low gain and hence high threshold current, limiting peak performance. We introduce here explicit design considerations that enable EDAS-based devices to be developed with increased optical confinement in the active layer without changing the p-side layer thicknesses. Specifically, this is realized by introducing a third asymmetric component in the vicinity of the quantum well. We call this approach Extreme-Triple-ASymmetric (ETAS) design. A series of ETAS-based vertical designs were fabricated into broad area lasers that deliver up to 63% power conversion efficiency at 14 W CW optical output power from a 100 μm stripe laser, which corresponds to the operation point of a kW optical output power in a laser bar. The design process, the impact of structural changes on power saturation mechanisms and finally devices with improved performance will be presented.
机译：工业界一直在寻求能够以最高的可实现的光输出功率达到最高效率的广域激光器，以降低运营成本并提高系统性能。由于极低的串联电阻，低的光损耗和低的载流子泄漏，使用极度双不对称（EDAS）外延设计的器件有望在高光输出功率下提高效率。但是，EDAS设计利用了超薄的p侧波导，这意味着光学模式转移到了n侧波导中，导致有源区的光学限制较低，增益较低，因此阈值电流较高，从而限制了峰值性能。我们在此介绍了明确的设计注意事项，这些考虑因素使基于EDAS的设备能够在不改变p侧层厚度的情况下，在有源层中增加光学限制而得以开发。具体而言，这是通过在量子阱附近引入第三不对称成分来实现的。我们称这种方法为极三重对称（ETAS）设计。一系列基于ETAS的垂直设计被制造成大面积激光器，该激光器在100 W条纹激光器的14 W CW光输出功率下提供高达63％的功率转换效率，这相当于kW中的kW光输出功率的工作点。激光棒。将介绍设计过程，结构变化对功率饱和机制的影响以及最终具有改进性能的设备。

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  • 来源
  • 会议地点 San Francisco(US)
  • 作者

    T. Kaul; G. Erbert; A. Maassdorf; D. Martin; P. Crump;

  • 作者单位

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Diode laser; chip-design; high power; high efficiency; AlGaAs; EDAS; ETAS; kW-class; laser bars; pump sources; continuous wave;

    机译：二极管激光器；芯片设计；大功率;高效率;铝镓砷; EDAS; ETAS；千瓦级激光棒泵源；连续波;

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