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PROCESS FOR MAKING A CRYSTALLINE SOLID-SOLUTION POWDER WITH LOW ELECTRICAL RESISTANCE
PROCESS FOR MAKING A CRYSTALLINE SOLID-SOLUTION POWDER WITH LOW ELECTRICAL RESISTANCE
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机译：制备低电阻晶体固溶粉的方法
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摘要
A PROCESS FOR MAKING A CRYSTALLINE SOLID-SOLUTION POWDER (1) WHICH INVOLVES REACTING AT LEAST TWO REACTANTS IN A PLASMA ARC OF A PLASMA CHAMBER AND BLAST-COOLING THE RESULTANT PRODUCT IN A HIGH VELOCITY GAS STREAM TO FORM THE POWDER. THE FIRST REACTANT IS A MOLTEN METAL ALLOY AND THE SECOND REACTANT IS A GAS. THE REACTION IS CARRIED OUT IN A PLASMA ARC AND THE PRODUCTS RAPIDLY COOLED BY A GAS STREAM ACTING AT THE OUTLET OPENING OF THE PLASMA CHAMBER. THE CRYSTALLINE SOLID-SOLUTION POWDER (1) FORMED BY THE PROCESS HAS A LOW ELECTRICAL RESISTIVITY. IF AN INDIUM-TIN ALLOY IS USED AS THE FIRST REACTANTAND OXYGEN AS THE SECOND REACTANT, THERE IS OBTAINED AN INDIUM-TIN-OXIDE (ITO) CRYSTALLINE SOLID-SOLUTION POWDER (1) WHICH, WHEN COMPACTED TO 40OF ITS THEORECTICAL DENSITY, HAS AN ELECTRICAL RESISTIVITY IN THE RANGE OF ABOUT 2 (OHM) CM. THIS ITO CRYSTALLINE SOLID-SOLUTION POWDER (1) IS PARTICULARLY SUITABLE FOR PREPARING AN ITO TARGET, WITH HIGH ELECTRICAL CONDUCTIVITY AND THUS HIGH ACHIEVABLE SPUTTERING RATES.FIGURE 2
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