首页> 外国专利> Method of estimating the remaining film thickness distribution, residual layer thickness patterning mask and correcting method of the insulation film removing mask using an estimation method of the distribution, and a semiconductor device using a patterned mask and the insulating film removing mask was modified method of manufacture

Method of estimating the remaining film thickness distribution, residual layer thickness patterning mask and correcting method of the insulation film removing mask using an estimation method of the distribution, and a semiconductor device using a patterned mask and the insulating film removing mask was modified method of manufacture

机译：修改了剩余膜厚度分布的估计方法，剩余层厚度图案化掩模和使用该分布的估计方法的绝缘膜去除掩模的校正方法，以及使用图案化掩模和绝缘膜去除掩模的半导体器件的制造方法被修改。

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PROBLEM TO BE SOLVED: To suppress the generations of the global steps caused by unbalance in the residue-film thicknesses after a CMP process, when making semiconductor elements by performing an STI-CMP process.;SOLUTION: By utilizing a residue-film-thickness distribution (a pattern-ratio distribution for CMP) which is the assumed-value distribution of residue-film thicknesses after a CMP process; and by using a computer, there is extracted a first region A in a patterning mask, which corresponds to an region X having higher values for the residue-film-thickness distribution than a first threshold. Then, in a region of the first region A, wherefrom a mask pattern 16 for forming an activated region is excluded, there is modified and designed the layout of a first quasi mask pattern 40a for forming a first quasi-activated region having a width which is not smaller than the predetermined width in a semiconductor substrate. Also, in accordance with the modifying of this patterning mask, an isolation-film removing mask pattern 40a' is so modified and so designed in a first region A' of the isolation-film removing mask as to remove the predetermined region of the isolation film, which is to be formed on the first quasi activated region. Then, based on these designs, the patterning mask and the isolation-film removing mask are formed realistically.;COPYRIGHT: (C)2004,JPO&NCIPI

机译：解决的问题：当通过执行STI-CMP工艺制造半导体元件时，为了抑制由于CMP工艺后残留膜厚度不平衡而导致的全局台阶的产生;解决方案：利用残留膜厚度分布（CMP的图案比率分布），它是CMP处理后残留膜厚度的假定值分布;通过使用计算机，在构图掩模中提取第一区域A，该第一区域A对应于具有比第一阈值高的残留膜厚度分布值的区域X。然后，在第一区域A的区域中，从其中排除用于形成激活区域的掩模图案16，修改并设计了用于形成第一准掩模区域40a的布局，该第一准掩模图案40a的宽度为不小于半导体衬底中的预定宽度。而且，根据该构图掩模的修改，对隔离膜去除掩模图案40a'进行这样的修改，并在隔离膜去除掩模的第一区域A'中进行设计，以去除隔离膜的预定区域。，其将形成在第一准激活区域上。然后，在这些设计的基础上，现实地形成了构图掩模和隔离膜去除掩模。版权所有：（C）2004，JPO＆NCIPI

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公开/公告号JP3703799B2

专利类型
公开/公告日2005-10-05

原文格式PDF
申请/专利权人沖電気工業株式会社;宮城沖電気株式会社;
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申请/专利号JP20020362864
发明设计人森田毅;
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申请日2002-12-13
分类号H01L21/76;
国家 JP
入库时间 2022-08-21 22:27:38

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