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Composite structure of the crystalline oxide dielectric thin film and the single crystal silicon substrate and electronic devices and methods for their preparation using the same

机译：晶体氧化物介电薄膜和单晶硅衬底的复合结构以及电子器件及其制备方法

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摘要

PROBLEM TO BE SOLVED: To realize an IS structure having a crystalline oxide dielectric layer having little leak current, a high breakdown voltage, and a sufficiently long life with the elapse of time against the breakdown voltage, that is, a composite structure of a crystalline oxide dielectric thin film and a single crystal silicon substrate. SOLUTION: In a composite structure in which a crystalline oxidc dielectric thin film 2 is grown on a single crystal silicon semiconductor substrate 1, the crystalline oxide dielectric thin film 2 is formed by a thin film (single film or stacked layer made of, for example, stabilized zirconia, cerium oxide, strontium titanate, magnesium oxide, or yttrium oxide) to which a heat treatment is performed in an active oxygen atmosphere after the growth.

机译：解决的问题：为了实现一种具有晶体氧化物电介质层的IS结构，该IS结构具有漏电流小，击穿电压高，并且随着时间的流逝与击穿电压的关系足够长的寿命，即晶体的复合结构。氧化物介电薄膜和单晶硅衬底。 SOLUTION：在其中在单晶硅半导体衬底1上生长晶体氧化物介电薄膜2的复合结构中，晶体氧化物介电薄膜2由薄膜（例如，单膜或叠层，例如由，稳定的氧化锆，氧化铈，钛酸锶锶，氧化镁或氧化钇），生长后在活性氧气氛中对其进行热处理。

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公开/公告号JP3684709B2

专利类型
公开/公告日2005-08-17

原文格式PDF
申请/专利权人日産自動車株式会社;
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申请/专利号JP19960262697
发明设计人谷本智;
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申请日1996-10-03
分类号H01L27/105;H01L21/822;H01L21/8242;H01L21/8247;H01L27/04;H01L27/108;H01L29/788;H01L29/792;H01L41/08;H01L49/00;
国家 JP
入库时间 2022-08-21 22:28:52

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