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SLURRY COMPOSITION FOR POLISHING METAL LINE WHICH OVERCOMES EROSION PROBLEM
SLURRY COMPOSITION FOR POLISHING METAL LINE WHICH OVERCOMES EROSION PROBLEM
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机译：克服侵蚀问题的抛光金属线的泥浆成分
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摘要
PURPOSE: Provided is a slurry composition suitable for CMP(Chemical Mechanical Polishing/Planarization) process of metal line, which shows uniform polishing capability and excellent dispersion stability when stored for a long time, and which overcomes erosion and recess problems occurring when polishing. CONSTITUTION: The composition comprises 1-30 wt% of metal oxide particles, 0.01-1 wt% of iodine-based compound, 0.25-2 wt% of hydrogen peroxide, 0.01-0.05 wt% of phosphorus-based compound, 0.01-1 wt% of polyacrylic acid, 0.3-0.5 wt% of nitric acid, and the rest of deionized water. The metal oxide is silica(SiO2) and/or alumina(Al2O3), the iodine-based compound is at least one selected from the group consisting of iodobenzene diacetate, iodobenzoic acid, and iodoaniline, and the phosphorus-based compound is trimethyl phosphite or triethyl phosphite.
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