首页> 外国专利> Bent-beam actuator for residual stress measurement in micro electro mechanical system(MEMS) and its fabricating method and method of residual stress measurement using the bent beam actuator

Bent-beam actuator for residual stress measurement in micro electro mechanical system(MEMS) and its fabricating method and method of residual stress measurement using the bent beam actuator

机译:用于微机电系统中残余应力测量的弯曲梁致动器及其制造方法和使用弯曲梁致动器的残余应力测量方法

摘要

PURPOSE: A pattern for testing residual stress of a micro electro mechanical system, a method for fabricating the same and a method for measuring residual stress by using the same are provided to simultaneously measure residual compression stress and residual tension stress. CONSTITUTION: A sacrificial layer(302) is formed by oxidizing a silicon substrate(301). A multi-crystalline seed layer is deposited on the sacrificial layer(302). An epitaxial multi-crystalline silicon layer(304) is grown by using the multi-crystalline seed layer. An electrode(305) is formed at a predetermined region of the epitaxial multi-crystalline silicon layer(304). Then, a predetermined portion of the epitaxial multi-crystalline silicon layer(304) is removed through a dry etching process. After that, the sacrificial layer(302) formed below the epitaxial multi-crystalline silicon layer(304) is removed.
机译:目的:提供用于测试微机电系统的残余应力的图案,其制造方法以及通过使用该图案来测量残余应力的方法,以同时测量残余压缩应力和残余张应力。组成:牺牲层(302)是通过氧化硅衬底(301)形成的。在牺牲层(302)上沉积多晶种子层。通过使用多晶硅籽晶层来生长外延多晶硅层(304)。电极(305)形成在外延多晶硅层(304)的预定区域。然后,通过干蚀刻工艺去除外延多晶硅层(304)的预定部分。之后,去除在外延多晶硅层(304)下面形成的牺牲层(302)。

著录项

  • 公开/公告号KR100441488B1

    专利类型

  • 公开/公告日2004-07-23

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010070471

  • 发明设计人 전국진;이병렬;석선호;

    申请日2001-11-13

  • 分类号B81B7/02;

  • 国家 KR

  • 入库时间 2022-08-21 22:46:53

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号