首页> 外国专利> ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM-USE REFLECTION MIRROR, ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, APPLICATION METHOD FOR ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, PRODUCTION METHOD FOR ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, ULTRA-SHORT ULTRAVIOLET EXPOSURE SYSTEM, AND APPLICATION METHOD FOR ULTRA-SHORT ULTRAVIOLET EXPOSU

ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM-USE REFLECTION MIRROR, ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, APPLICATION METHOD FOR ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, PRODUCTION METHOD FOR ULTRA-SHORT ULTRAVIOLET OPTICAL SYSTEM, ULTRA-SHORT ULTRAVIOLET EXPOSURE SYSTEM, AND APPLICATION METHOD FOR ULTRA-SHORT ULTRAVIOLET EXPOSU

机译：超短波紫外线光学系统-使用反射镜，超短波紫外线光学系统，超短波紫外线光学系统的应用方法，超短波紫外线光学系统的生产方法，超短波紫外线光学曝光方法，系统-短紫外线展

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摘要

A thin-film resistor layer (2) consisting of TaN is formed on a low-thermal-expansion glass substrate (1). A 100-nm-thick electrode layer (3) consisting of Al is provided to feed a current to the resistor layer (2) so as to contact the opposite ends thereof. A 300-nm-thick insulation layer (4) consisting of SiO2 is formed on the resistor layer (2). And, an Mo/Si multi-layer optical film (5) having a frequency length of 6.7 nm and 50 layer pairs is formed thereon to serve as a reflector. The multi-layer optical film (5) is electrically insulated from the resistor layer (2) by the insulation layer (4). The resistor layer (2) is provided with a cut (21) about 10 μm wide to provide a desired heating distribution. A properly arranged cut (21) makes it possible to obtain almost the same heating distribution as by heating by light absorption when an EUV light is applied. Accordingly, a ultra-short ultraviolet optical system-use reflection mirror is provided that can give optical characteristics close to those in an actual use even while its optical characteristics are being measured.

机译：在低热膨胀玻璃基板（1）上形成由TaN构成的薄膜电阻层（2）。提供由Al组成的100nm厚的电极层（3），以将电流馈送到电阻器层（2），以使其接触其相对端。在电阻器层（2）上形成由SiO 2组成的300nm厚的绝缘层（4）。并且，在其上形成具有6.7nm的频率长度和50对层的Mo / Si多层光学膜（5），以用作反射器。多层光学膜（5）通过绝缘层（4）与电阻层（2）电绝缘。电阻器层（2）具有约10μm宽的切口（21），以提供期望的热分布。适当布置的切口（21）使得与施加EUV光时通过吸光加热产生的热量分布几乎相同。因此，提供了一种超短紫外线光学系统用反射镜，即使在测量其光学特性时，该反射镜也可以提供接近于实际使用中的光学特性。

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公开/公告号WO2004034447A1

专利类型
公开/公告日2004-04-22

原文格式PDF
申请/专利权人 NIKON CORPORATION;MURAKAMI KATSUHIKO;
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申请/专利号WO2003JP12887
发明设计人 MURAKAMI KATSUHIKO;
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申请日2003-10-08
分类号H01L21/027;G03F7/20;G21K1/06;G02B5/08;
国家 WO
入库时间 2022-08-21 22:57:05

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