Plasma etching of dielectric layer with etch profile control

• 1. 利用环形沿面放电等离子装置的点状蚀刻模块以及点状蚀刻模块的蚀刻轮廓的控制方法 [P] . 中国专利： CN111801784A . 2020-10-20
• 2. 以高源和低轰击等离子体提供高蚀刻速率的电介质蚀刻方法 [P] . 中国专利： CN101350303A . 2009-01-21
• 3. Plasma etching of dielectric layer with etch profile control [P] . 美国专利： US2003045114A1 . 2003-03-06

  机译： 通过蚀刻轮廓控制对电介质层进行等离子蚀刻

• 4. Method and apparatus for detecting imminent end-point when etching dielectric layers in a plasma etch system [P] . 美国专利： US5198072A . 1993-03-30

  机译： 在等离子体蚀刻系统中蚀刻介电层时检测即将到来的端点的方法和设备

• 5. POINT ETCHING MODULE USING ANNULAR SURFACE-DISCHARGE PLASMA APPARATUS AND METHOD FOR CONTROLLING ETCH PROFILE OF POINT ETCHING MODULE [P] . 世界知识产权组织专利： WO2019160329A1 . 2019-08-22

  机译： 使用环形表面放电等离子体装置的点刻蚀模块以及控制点刻蚀模块的刻蚀轮廓的方法

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