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首页> 外国专利> INTERFACIAL STRUCTURE FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND SUBSTRATE TRANSFER CHAMBERS AND FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND ACCESSORY ATTACHMENTS, AND SEMICONDUCTOR SUBSTRATE PROCESSOR

INTERFACIAL STRUCTURE FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND SUBSTRATE TRANSFER CHAMBERS AND FOR SEMICONDUCTOR SUBSTRATE PROCESSING CHAMBERS AND ACCESSORY ATTACHMENTS, AND SEMICONDUCTOR SUBSTRATE PROCESSOR

机译：半导体基板处理腔室和基板传输腔室以及半导体基板处理腔室和附件，以及半导体基板处理程序的界面结构

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摘要

A semiconductor substrate processor includes a substrate transfer chamber and a plurality of substrate processing chambers connected therewith. An interfacial structure is received between at least one of the processing chambers and the transfer chamber. The interfacial structure includes a substantially non-metallic, thermally insulative mass of material interposed between the one processing chamber and the transfer chamber. The mass is of sufficient volume to effectively reduce heat transfer from the processing chamber to the transfer chamber than would otherwise occur in the absence of said mass of material. An interfacial structure includes a body having a substrate passageway extending therethrough. The passageway includes walls at least a portion of which are substantially metallic. The body includes material peripheral of the walls which is substantially non-metallic and thermally insulative. The substantially non-metallic material has mounting openings extending at least partially therein.
机译：半导体衬底处理器包括衬底传送室和与其连接的多个衬底处理室。在至少一个处理腔室和传送腔室之间容纳界面结构。界面结构包括置于一个处理腔室和转移腔室之间的基本上非金属的绝热材料。该物质具有足够的体积，以有效地减少从处理腔室到传递腔室的热传递，这比不存在所述物质的情况下会发生的传热要少。界面结构包括具有延伸穿过其中的基底通道的主体。该通道包括至少一部分基本上是金属的壁。主体包括壁的材料外围，该材料外围基本上是非金属的并且是绝热的。基本上非金属的材料具有在其中至少部分地延伸的安装开口。

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