首页>
外国专利>
Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects
Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects
展开▼
机译:源极交替MOCVD工艺以沉积氮化钨薄膜作为MOCVD铜互连的阻挡层
展开▼
页面导航
摘要
著录项
相似文献
摘要
An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine crystal grain films, or possibly amorphous films. The nitrogen source may also be alternated to form WN/W alternating layer films, as tungsten is deposited during periods where the nitrogen source is removed.
展开▼