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Light source using the semiconductor light-emitting device manufacturing method of a group III nitride semiconductor crystal manufacturing method of a gallium nitride-based compound semiconductor, a gallium nitride based compound semiconductor, and the gallium nitride-based compound semiconductor light-emitting device
Light source using the semiconductor light-emitting device manufacturing method of a group III nitride semiconductor crystal manufacturing method of a gallium nitride-based compound semiconductor, a gallium nitride based compound semiconductor, and the gallium nitride-based compound semiconductor light-emitting device
A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
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