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METHOD AND APPARATUS FOR MANUFACTURING SUPER-THIN SEMICONDUCTOR DEVICE AND SUPER-THIN BACKLIGHTING TYPE SOLID-STATE IMAGING DEVICE

机译：制造超薄半导体装置和超薄背光型固态成像装置的方法和装置

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摘要

PPROBLEM TO BE SOLVED: To provide a super-thin semiconductor device which can be improved in productivity and quality by using a semiconductor layer formed on a base substrate across an insulating layer, and improving the separating property of the semiconductor layer from the base substrate, and to provide a method of manufacturing a super-thin backlighting type solid-state imaging device. PSOLUTION: A base material has a releasing layer 21 such as a porous layer, a 2nd semiconductor layer 22, an insulating layer 23, and a 1st semiconductor layer 12 laminated on the base substrate 20. A solid-state imaging sensor, and a projection type connection electrode 36 which is connected to the solid-state imaging sensor, are formed on the 1st semiconductor layer 12. A cutting groove S to the release layer 21 is formed along a parting line for division into respective solid-state imaging devices. A resin protecting film 40 is formed which is charged in the cutting groove S to cover the 1st semiconductor layer 12 and expose the connection electrode 36. The base substrate 20 is peeled along the peeling layer 21 as a border and the base substrate 20 is cut from the side of the 2nd semiconductor layer 22 along the resin protecting film 40 charged in the cutting groove S, and divided into the respective solid-state imaging devices. PCOPYRIGHT: (C)2004,JPO

机译：

要解决的问题：提供一种超薄半导体器件，该超薄半导体器件可以通过使用跨过绝缘层形成在基础基板上的半导体层并提高半导体层与绝缘层之间的分离性而提高生产率和质量。基板，并提供一种制造超薄背光型固态成像装置的方法。

解决方案：基材具有层压在基础基板20上的多孔层等剥离层21，第二半导体层22，绝缘层23和第一半导体层12。在第一半导体层12上形成有与固态成像传感器连接的突起型连接电极36。沿着分型线形成有向剥离层21的切割槽S，用于分割成各固态成像。设备。形成树脂保护膜40，该树脂保护膜40填充在切割槽S中以覆盖第一半导体层12并露出连接电极36。沿着剥离层21作为边界剥离基底基板20，并切割基底基板20。从第二半导体层22的侧面起，沿着带入切割槽S的树脂保护膜40，划分为各个固体摄像元件。

版权：（C）2004，日本特许厅展开▼

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公开/公告号JP2004134672A

专利类型
公开/公告日2004-04-30

原文格式PDF
申请/专利权人 SONY CORP;
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申请/专利号JP20020299563
发明设计人 YAMANAKA HIDEO;
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申请日2002-10-11
分类号H01L27/14;H01L27/146;
国家 JP
入库时间 2022-08-21 23:27:08

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