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GALLIUM NITRIDE-BASED SOLID SOLUTION THIN FILM METAL SUBSTRATE, GALLIUM NITRIDE-BASED SOLID SOLUTION THIN FILM SUBSTRATES, AND METHOD OF PRODUCING THE SAME
GALLIUM NITRIDE-BASED SOLID SOLUTION THIN FILM METAL SUBSTRATE, GALLIUM NITRIDE-BASED SOLID SOLUTION THIN FILM SUBSTRATES, AND METHOD OF PRODUCING THE SAME
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机译：基于氮化镓的固溶体薄膜金属基质，基于氮化镓的固溶体薄膜基质及其制备方法
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摘要
PROBLEM TO BE SOLVED: To provide a method for producing a thin film metal substrate which is used in an electronic device such as a blue LED element and in which a thin film of a gallium nitride-based solid solution is formed.;SOLUTION: The method for producing the thin film of the gallium nitride-based solid solution comprises accommodating a substrate 30 and a target 20 of the gallium nitride-based solid solution in a chamber 10, on the other hand, setting the temperature of the chamber to be ≤700°C, irradiating the target 20 with sputter ion beam from an ion source 13 for sputtering, provided in the chamber 10, and simultaneously irradiating the thin film metal substrate 100A with assist ion beam from an ion source 15 for assisting, provided in the chamber 10 so as to form the thin film of the gallium nitride-based solid solution on the substrate 100A. The excellent thin film of the gallium nitride-based solid solution having orientation property and good flatness and almost free from the deviation in the composition can be produced by utilizing this ion beam assist method.;COPYRIGHT: (C)2004,JPO&NCIPI
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