首页> 外国专利> Fabrication of electronic component incorporating inductive microcomponent, e.g. inductor or transformer, comprises etching copper-diffusion barrier layer between turns of inductive microcomponent

Fabrication of electronic component incorporating inductive microcomponent, e.g. inductor or transformer, comprises etching copper-diffusion barrier layer between turns of inductive microcomponent

机译:结合有感应微组件的电子组件的制造,例如电感器或变压器,包括在感应微组件的匝之间蚀刻铜扩散阻挡层

摘要

Electronic component incorporating inductive microcomponent is manufactured by etching copper-diffusion barrier layer (15) between turns (30, 31) of inductive microcomponent. Fabrication of electronic component incorporating inductive microcomponent, comprises: (i) depositing layer of material having low relative permittivity on substrate (1); (ii) depositing layer (12) forming hard mask; (iii) forming aperture in the hard mask vertically above the metal pads; (iv) etching the layer on material having low relative permittivity down to metal pad to form interconnection hole or via; (v) depositing layer forming copper barrier diffusion; (vi) depositing copper primer layer; (vii) depositing protective mask and removing it from the bottom of the via; (viii) depositing copper electrolytically in the via; (ix) removing the rest of the protective mask; (x) depositing top resist layer with thickness similar to the thickness of turns of the inductive microcomponent; (xi) etching the resist layer to form channels defining geometry of turns of the inductive microcomponent; (xii) depositing layer electrolytically in the etch channels; (xiii) removing the rest of the top resist layer; (xiv) etching the copper primer layer between copper turns; and (xv) etching copper-diffusion barrier layer between turns of inductive microcomponent.
机译:通过蚀刻感应微元件的匝(30、31)之间的铜扩散阻挡层(15)来制造结合有感应微元件的电子元件。包含感应微部件的电子部件的制造包括:(i)在基板(1)上沉积相对介电常数低的材料层; (ii)沉积层(12)形成硬掩模; (iii)在硬掩模上在金属焊盘的垂直上方形成孔; (iv)将具有低相对介电常数的材料上的层蚀刻至金属焊盘,以形成互连孔或过孔; (v)形成铜势垒扩散的沉积层; (vi)沉积铜底漆层; (vii)沉积防护罩并将其从通孔的底部移除; (viii)在通孔中电解沉积铜; (ix)取下其余的防护面罩; (x)沉积具有与感应微组件的匝的厚度相似的厚度的顶部抗蚀剂层; (xi)蚀刻抗蚀剂层以形成限定感应微部件的匝的几何形状的通道; (xii)在蚀刻通道中电解沉积层; (xiii)去除其余的顶部抗蚀剂层; (xiv)蚀刻铜匝之间的铜底漆层; (xv)在感应微元件的匝之间蚀刻铜扩散阻挡层。

著录项

  • 公开/公告号FR2832853A1

    专利类型

  • 公开/公告日2003-05-30

    原文格式PDF

  • 申请/专利权人 MEMSCAP;

    申请/专利号FR20010015458

  • 发明设计人 GIRARDIE LIONEL;DAVID JEAN BAPTISTE;

    申请日2001-11-29

  • 分类号H01L21/02;H01F17/00;

  • 国家 FR

  • 入库时间 2022-08-21 23:37:51

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号