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Improving wet etching uniformity during spin-etching of a layer on a semiconductor wafer, by forming a water film on the wafer before acid etching of the layer
Improving wet etching uniformity during spin-etching of a layer on a semiconductor wafer, by forming a water film on the wafer before acid etching of the layer
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机译：通过在酸蚀刻层之前在晶片上形成水膜，在旋转旋转蚀刻半导体晶片上的层期间提高湿法蚀刻的均匀性
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摘要
Wet etching uniformity is improved by forming a water film on a layer-bearing semiconductor wafer (10) before acid etching of the layer. An Independent claim is also included for a wet etching process comprising: application of deionized water onto a rotating layer-bearing semiconductor wafer (10) to form an aqueous film and application of an acid solution (40) to etch the layer before the water film dries. Preferred Features: The layer is a metallic layer (e.g. of copper or aluminum) or a non-metallic layer (e.g. silicon, silicon oxide, borophosphosilicate glass (BPSG), phosphosilicate glass (PSG), borosilicate glass (BSG). silicon nitride, silicon oxynitride or spin-on glass). The acid solution contains sulfuric, hydrofluoric, nitric, phosphoric and/or acetic acids.
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