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Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate

机译:光子器件,用于制造光子器件的衬底,用于制造光子器件的方法以及用于制造光子器件的衬底的方法

摘要

A buffer layer with a composition of AlaGabIncN (abc1, a, b, c0) and a multilayered thin films with a composition of AlxGayInzN (xyz1, x, y, z0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buffer layer is set to be larger than that of at least the thickest layer of the multilayered thin films. The Al component of the buffer layer is decreased continuously or stepwise from the side of the substrate to the side of the multilayered thin films therein.
机译:依次在基板上形成具有AlaGabIncN(abc1,a,b,c0)组成的缓冲层和具有AlxGayInzN(xyz1,x,y,z0)组成的多层薄膜。缓冲层的Al成分最小部分的Al成分被设定为大于多层薄膜的至少最厚层的Al成分。从衬底的侧面到其中的多层薄膜的侧面连续地或逐步地减小缓冲层的Al成分。

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