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Apparatus for epitaxially for growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
Apparatus for epitaxially for growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
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机译：利用HVPE外延生长具有亚微米III族氮化物层的半导体器件结构的设备
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摘要
A method and apparatus for fabricating thin Group III nitride layers as well as Group III nitride layers that exhibit sharp layer-to-layer interfaces are provided. According to one aspect, an HVPE reactor includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor includes both a growth zone and a growth interruption zone. According to another aspect, an HVPE reactor includes a slow growth rate gallium source, thus allowing thin layers to be grown. Using the slow growth rate gallium source in conjunction with a conventional gallium source allows a device structure to be fabricated during a single furnace run that includes both thick layers (i.e., utilizing the conventional gallium source) and thin layers (i.e., utilizing the slow growth rate gallium source).
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