Disclosed is a method of inspecting the electrical characteristics of a to-be-inspected object formed on a wafer under the state that the wafer chuck having the wafer placed thereon is overdriven by a lift mechanism, wherein measured is the sinking amount of the wafer chuck caused by the needle load applied from a plurality of probes of a probe card to the wafer chuck. Also disclosed are a needle load measuring method for measuring the applied needle load from the sinking amount, a needle load setting method, and a needle load detecting mechanism.
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