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High resistivity silicon wafer produced by a controlled pull rate czochralski method
High resistivity silicon wafer produced by a controlled pull rate czochralski method
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机译：通过控制拉速czochralski方法生产的高电阻率硅晶片
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摘要
A method of obtaining a wafer exhibiting high resistivity and high gettering effect while preventing the reduction of resistivity due to the generation of oxygen donors, and while further minimizing in-grown defects is provided by: a) using the CZ method to grow a silicon single crystal ingot having a resistivity of 100 &OHgr;·cm or more, preferably 1000 &OHgr;·cm, and an initial interstitial oxygen concentration of 10 to 40 ppma with a v/G ratio of from about 1×10−5 cm2/s·K to about 5×10−5 cm2/s·K, b) processing the ingot into a wafer, and c) subjecting the wafer to an oxygen precipitation heat treatment whereby the residual interstitial oxygen content in the wafer is reduced to about 8 ppma or less.
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机译：提供一种获得具有高电阻率和高吸杂效果的晶片的方法，同时防止由于氧供体的产生而引起的电阻率的降低，同时进一步最小化生长缺陷：a）使用CZ方法生长单晶硅晶体锭的电阻率为100Ω·cm或更高，优选为1000Ω·cm，并且初始间隙氧浓度为10至40ppma，且v / G比为约1×10 Sup负。 5 cm 2 / s＆middot; K到大约5＆times; 10 ＆minus; 5 cm 2 / s＆middot; K，b）处理将晶锭放入晶片中，以及c）对晶片进行氧沉淀热处理，从而将晶片中的残余间隙氧含量降低至约8 ppma或更小。
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