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EPMA analysis method using a Monte Carlo simulation

机译:使用Monte Carlo模拟的EPMA分析方法

摘要

PROBLEM TO BE SOLVED: To obtain an EPMA analysis method using Monte Carlo simulation that can accurately analyze thin-film and minute-object samples that are smaller than an X-ray generation region, and can accurately carry out analysis by simulation with a small number of electrons. SOLUTION: An X-ray absorption model where a sample in a rectangular parallelepiped shape is buried into a matrix that is sufficiently larger than an X-ray generation region while merely the upper surface is being exposed is supposed, size in the vertical, horizontal, and depth directions of the sample in the X-ray absorption model is set according to the size and shape, at the same time, J=11.5Z×10-3 [Kev] and &Bgr;= 5.44Z2/3/E)×10-3 are used as ionized potential (Kev) and the constant of a screening parameter in each calculation expression of a scattering angle and the angle of rotation in the calculation expression, the energy loss of an electron, and a probability where the electron collides with an element, and the number of incident electrons is set to less than 1,000 for simulating.
机译:要解决的问题:要获得一种使用蒙特卡洛模拟的EPMA分析方法,该方法可以准确地分析小于X射线生成区域的薄膜和微小对象样本,并且可以通过少量仿真来准确地进行分析电子。解决方案:假设采用X射线吸收模型,其中将长方体形状的样品埋入足够大于X射线发生区域的矩阵中,而仅暴露其上表面,垂直,水平,根据尺寸和形状设置X射线吸收模型中样品的深度方向,同时,J = 11.5Z×10-3 [Kev],B = 5.44Z2 / 3 / E)× ; 10-3在每个计算表达式中用作散射离子和旋转角的计算公式中的电离势(Kev)和筛选参数的常数,电子的能量损失以及电子发生的概率与元素发生碰撞,并且为了进行模拟,入射电子的数量设置为小于1,000。

著录项

  • 公开/公告号JP3409742B2

    专利类型

  • 公开/公告日2003-05-26

    原文格式PDF

  • 申请/专利权人 日本軽金属株式会社;

    申请/专利号JP19990200737

  • 发明设计人 長田 義男;

    申请日1999-07-14

  • 分类号G01N23/225;

  • 国家 JP

  • 入库时间 2022-08-22 00:21:07

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